Co ₂ FeAl Full Heusler Compound Based Spintronic Terahertz Emitter

Epitaxy of thin films of the Heusler compound Co

Tunnel magnetoresistance effect and magnetic damping in half-metallic Heusler alloys.

Some full-Heusler alloys, such as Co(2)MnSi and Co(2)MnGe, are expected to be half-metallic ferromagnetic material, which has complete spin polarization. They are the most promising materials for realizing half-metallicity at room temperature owing to their high Curie temperature. We demonstrate a huge tunnel magnetoresistance effect in a magnetic tunnel junction using a Co(2)MnSi Heusler alloy...

Theory of Heusler and Full-Heusler compounds

Spintronics/magnetoelectronics brought at the center of scientific research the Heusler and full-Heusler compounds, since several among them have been shown to be half-metals. In this review we present a study of the basic electronic and magnetic properties of both Heusler families; the so-called semi-Heusler alloys like NiMnSb and the full-Heusler alloys like Co2MnGe (usual full-Heuslers), Mn2...

Inverted spin polarization of Heusler alloys for new spintronic devices

A new magnetic logic overcomes the major limitations of field programmable gate arrays while having a 50% smaller unit cell than conventional designs utilizing magnetic tunnel junctions with one Heusler alloy electrode. These show positive and negative TMR values at different bias voltages at room temperature which generally adds an additional degree of freedom to all spintronic devices. Electr...

Theoretical prediction of strain tuneable quaternary spintronic Heusler compounds

Heusler materials have attracted a large amount of attention in the development of spintronic technologies. In this issue, Wang et al. [IUCrJ (2017), 4, 758-768] show how strain can be used to tune the band structure of these materials.